Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Effect of gamma irradiation on photoconversion characteristics of metal/gallium arsenide barrier structures with textured interface

1. Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

   A. V. Karimov, D. A. Karimova

   MaqolaSemiconductor materials and interfacesMaterials Science in Semiconductor Processing20035 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000100

2. Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

   D. M. Edgorova

   MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20071 iqtibos

   ABIABI:AkademIndex/openalex/2007.article.000272