Maqola

Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

A. É. AtamuratovHeat Physics Department, Academy of Sciences of Uzbekistan, Tashkent, 700135, UzbekistanD. U. MatrasulovHeat Physics Department, Academy of Sciences of Uzbekistan, Tashkent, 700135, UzbekistanP. K. KhabibullaevHeat Physics Department, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan

Doklady Physicsjournal2007en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis

Identifikatorlar

DOI: 10.1134/s1028335807060080

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