Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials

1. Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

   E.U. Arzikulov, M. Radzhabova, Sh. J. Quvondiqov +1

   MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.002686

2. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   E.U. Arzikulov, M. Radzhabova, Xuemin Cui +6

   MaqolaSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.010089