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15 ta ish

Ish: Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics201319 iqtibos
    ABI

  2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    MaqolaSemiconductor materials and interfacesMaterials Science and Engineering B200314 iqtibos
    ABI

  3. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    MaqolaMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 iqtibos
    ABI

  4. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Maqola20119 iqtibos
    ABI

  5. Surface Science

    Kenjiro Oura, Michiko Katayama, А. В. Зотов +2

    Kitob20035 iqtibos
    ABI

  6. Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution

    I. P. Kalinkin, С. А. Кукушкін, А. В. Осипов

    Maqola20184 iqtibos
    ABI

  7. Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

    А. Ф. Комаров, Ф. Ф. Комаров, O. V. Milchanin +5

    Maqola20153 iqtibos
    ABI

  8. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    MaqolaNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    MaqolaSemiconductor materials and interfacesE3S Web of Conferences20211 iqtibos
    ABI