Ushbu ish iqtibos qilgan ishlar

5 ta ish

Ish: Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

1. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

   R. C. Barrett, C. F. Quate

   Maqola19915 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.568586

2. Rotating MNOS disk memory device

   Soichi Iwamura, Yuichiro Nishida, K. Hashimoto

   Maqola19812 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.568591

3. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

   A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

   MaqolaSemiconductor materials and devicesDoklady Physics20102 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.612723

4. Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology

   Hyunjung Shin, Seungbum Hong, Jooho Moon +1

   Maqola20022 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.612724

5. Electrostatic force microscopy: principles and some applications to semiconductors

   Paul Girard

   Maqola20012 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.612725