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12 ta ish

Ish: Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

  1. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

    R. C. Barrett, C. F. Quate

    Maqola19915 iqtibos
    ABI

  2. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    MaqolaSemiconductor materials and devicesDoklady Physics20074 iqtibos
    ABI

  3. Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM

    Y. Yatsuda, Shinji Nabetani, Ken Uchida +5

    Maqola19853 iqtibos
    ABI

  4. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer, J. Franco, Pieter Weckx +11

    Maqola20183 iqtibos
    ABI

  5. Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology

    Hyunjung Shin, Seungbum Hong, Jooho Moon +1

    Maqola20022 iqtibos
    ABI

  6. Electrostatic force microscopy: principles and some applications to semiconductors

    Paul Girard

    Maqola20012 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI