Ushbu ishga iqtibos qilgan ishlar

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Ish: Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

1. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000128

2. 4H-SiC High Temperature Spectrometers

   Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 iqtibos

   ABIABI:AkademIndex/openalex/2007.article.000197