Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Spatial distribution of the luminescence in GaN thin films

1. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

   М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000110

2. Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

   A. S. Usikov, V. V. Tret’yakov, W. V. Lundin +3

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/openalex/1999.article.000218