Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Influence of the Growth Parameters in GaAs Vapor Phase Epitaxy

1. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

   L. G. Lavrent’eva

   Maqolananoparticles nucleation surface interactionsRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/openalex/1980.article.000078

2. Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

   L. G. Lavrent’eva, V. A. Moskovkin, И. В. Ивонин

   MaqolaOptical Coatings and GratingsRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/openalex/1981.article.000119