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Ish: Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

1. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

   G. Sarov, Roumen Kakanakov, T. Cholakova +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000241

2. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/openalex/2003.article.000320