Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

1. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   MaqolaSemiconductor materials and interfaces20051 iqtibos

   ABIABI:AkademIndex/openalex/2005.article.000252

2. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   MaqolaSemiconductor materials and interfaces20051 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.609626

3. About the Interface Between the Higher Manganese Silicide Film and Si (111)

   T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

   MaqolaSemiconductor materials and interfaces20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000312