Р. Х. Хамидов

6 works

Ulugbek Tashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan

1. Advanced Universal Hydrostatic Pressure Device with Pneumatic Amplifier for the Investigation of the Electrical and Thermal Properties of Semiconductors under Hydrostatic Pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   ArticleHigh-pressure geophysics and materialsInstruments and Experimental Techniques202211 citations

   ABIABI:AkademIndex/openalex/2022.article.000422

2. Wave processes in silicon samples with nickel impurities arising at pulsed hydrostatic pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   ArticleElectromagnetic Effects on MaterialsSemiconductor Science and Technology20213 citations

   ABIABI:AkademIndex/openalex/2026.other.250850

3. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

   О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

   ArticleElectromagnetic Launch and Propulsion TechnologySemiconductors20002 citations

   ABIABI:AkademIndex/openalex/2000.article.000081

4. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

   О. О. Маматкаримов, Р. Х. Хамидов

   ArticleForce Microscopy Techniques and ApplicationsTechnical Physics Letters20031 citations

   ABIABI:AkademIndex/openalex/2003.article.000115

5. The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

   О. О. Маматкаримов, Р. Х. Хамидов, A. A. Abdukarimov

   ArticleElectromagnetic Effects on MaterialsMaterials Today Proceedings20191 citations

   ABIABI:AkademIndex/openalex/2019.article.000617

6. Electric voltage redistribution effect in Schottky barrier structures based on Si<P,Ni> under hydrostatic pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   ArticleSemiconductor materials and interfacesJournal of Physics Conference Series20220 citations

   ABIABI:AkademIndex/openalex/2022.article.009197