Sh. M. Kuliyev

6 works

Physical-Technical Institute of Uzbekistan Academy of Sciences 1 , Tashkent 100084, Uzbekistan

1. Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   ArticleCalibration and Measurement TechniquesLow Temperature Physics20234 citations

   ABIABI:AkademIndex/openalex/2026.other.437743

2. Distribution of impurities in base-depleted region of diode temperature sensor

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   ArticleChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 citations

   ABIABI:AkademIndex/openalex/2024.article.002075

3. Highly sensitive photodetector based on ge double-barrier punch-through structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

   ArticleSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20151 citations

   ABIABI:AkademIndex/openalex/2015.article.000359

4. Limiting characteristics of silicon diode temperature sensors for determining the maximum temperature with specified measurement accuracy

   Damir Istamov, O. A. Abdulkhaev, Sh. M. Kuliyev

   ArticleAdvanced MEMS and NEMS TechnologiesUNEC journal of engineering and applied sciences20251 citations

   ABIABI:AkademIndex/openalex/2025.article.003055

5. Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

   ArticleSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20180 citations

   ABIABI:AkademIndex/openalex/2018.article.000896

6. Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment

   A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3

   ArticlePulsed Power Technology ApplicationsTechnology and design in electronic equipment20180 citations

   ABIABI:AkademIndex/openalex/2018.article.000902