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Jakhongir N. Usmonov

4 works

Andijan State University, 170100, Andijan, Uzbekistan

  1. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, А. С. Саидов, Akramjon Y. Boboev +1

    ArticleSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 citations
    ABI

  2. An Optimized Ultrasonic Spray Pyrolysis Device for The Production of Metal Oxide Films and Their Morfology

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev +1

    ArticleZnO doping and propertiesEast European Journal of Physics20243 citations
    ABI

  3. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

    С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

    ArticleSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 citations
    ABI

  4. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

    С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20240 citations
    ABI