А. В. Иванов

2 works

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Carrier transport in a diode base with locally nonuniform recombination properties

   А. В. Иванов, N. B. Strokan, V. B. Shuman

   ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters19971 citations

   ABIABI:AkademIndex/openalex/1997.article.000150

2. On the generation of radiation defects by accelerated ions in silicon

   А. В. Иванов, N. B. Strokan

   ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 citations

   ABIABI:AkademIndex/openalex/1998.article.000274