Carrier transport in a diode base with locally nonuniform recombination properties
А. В. ИвановA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. B. StrokanA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. B. ShumanA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Abstract
Nonuniformity of the recombination properties in the form of a layer of radiation defects is created in the base of a p +−n diode. The change in the effective hole lifetime, measured by an injection-extraction method, is investigated and attributed to recombination in this layer.