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The investigation of charge carriers life time dependence on degree of silicon doping with admixtures creating the deep levels

Sh. MakhkamovN.A. TursunovM. AshurovAN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki
1995en
ABI

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Topics

Semiconductor Quantum Structures and DevicesAdvancements in Semiconductor Devices and Circuit DesignSilicon and Solar Cell Technologies

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Cited by 00 references
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