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Works cited by this work

28 works

Work: New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

  1. Untitled

    Other1117 citations
    ABI

  2. Reversible conductivity changes in discharge-produced amorphous Si

    D. L. Staebler, C. R. Wroński

    Article19779 citations
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  3. A new semiempirical electronic structure and total energy calculation method for solids and large molecules

    Z. M. Khakimov

    ArticleAdvanced Chemical Physics StudiesComputational Materials Science19948 citations
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  4. Simplified LCAO Method for the Periodic Potential Problem

    J. C. Slater, G. F. Koster

    Article19546 citations
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  5. The electrical properties of sulphur in silicon

    S. D. Brotherton, Micháel J. King, G.J. Parker

    Article19816 citations
    ABI

  6. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

    M. Stutzmann, W. B. Jackson, C. C. Tsai

    Article19855 citations
    ABI

  7. (110) surface atomic structures of covalent and ionic semiconductors

    D. J. Chadi

    Article19795 citations
    ABI

  8. Negative-U Properties for Point Defects in Silicon

    G. D. Watkins, John R. Troxell

    Article19805 citations
    ABI

  9. Theory of the silicon vacancy: An Anderson negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>U</mml:mi></mml:math>system

    G. A. Baraff, E. O. Kane, Michael Schlüter

    Article19805 citations
    ABI

  10. Transferable tight-binding models for silicon

    I. Kwon, R. Biswas, C. Z. Wang +2

    Article19944 citations
    ABI

  11. Generating Transferable Tight-Binding Parameters: Application to Silicon

    L. Goodwin, A Skinner, D. G. Pettifor

    Article19894 citations
    ABI

  12. Multiplet splittings and Jahn-Teller energies for the vacancy in silicon

    M. Lannoo, G. A. Baraff, Michael Schlüter

    Article19813 citations
    ABI

  13. Microscopic Theory of Atomic Diffusion Mechanisms in Silicon

    Roberto Car, Paul J. Kelly, Atsushi Oshiyama +1

    Article19843 citations
    ABI

  14. Barrier to Migration of the Silicon Self-Interstitial

    Yaneer Bar-Yam, John D. Joannopoulos

    Article19843 citations
    ABI

  15. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair

    G. D. Watkins

    Article19673 citations
    ABI

  16. A new mechanism for interstistitial migration

    J. C. Bourgoin, J. W. Corbett

    Article19723 citations
    ABI

  17. High-resolution studies of sulfur- and selenium-related donor centers in silicon

    Erik Janzén, R. Stedman, G. Grossmann +1

    Article19843 citations
    ABI

  18. Theory of hydrogen diffusion and reactions in crystalline silicon

    Chris G. Van de Walle, P. J. H. Denteneer, Yaneer Bar-Yam +1

    Article19892 citations
    ABI

  19. The Nature of A Photoinduced Metastable State in α-Si:H

    F. T. Umarova, Z. M. Khakimov

    Chapter19972 citations
    ABI

  20. Computer Modelling of Electronic and Atomic Processes in Solids

    Book19972 citations
    ABI

  21. Ion-solid interactions for materials modification and processing

    D. B. Poker, D. Ila, Yaxiong Cheng +2

    Article19962 citations
    ABI

  22. Theory of Enhanced Migration of Interstitial Aluminum in Silicon

    G. A. Baraff, M. Schlüter, G. Allan

    Article19832 citations
    ABI

  23. DEFECT METASTABILITY IN HYDROGEN PASSIVATED POLYCRYSTALLINE SILICON

    N. H. Nickel, W. B. Jackson, N. M. Johnson

    Article19942 citations
    ABI

  24. DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL

    David Redfield

    Article19912 citations
    ABI

  25. Role of hydrogen complexes in the metastability of hydrogenated amorphous silicon

    W. B. Jackson

    Article19902 citations
    ABI