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Works cited by this work

23 works

Work: New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

  1. Reversible conductivity changes in discharge-produced amorphous Si

    D. L. Staebler, C. R. Wroński

    Article19779 citations
    ABI

  2. A new semiempirical electronic structure and total energy calculation method for solids and large molecules

    Z. M. Khakimov

    ArticleAdvanced Chemical Physics StudiesComputational Materials Science19948 citations
    ABI

  3. Simplified LCAO Method for the Periodic Potential Problem

    J. C. Slater, G. F. Koster

    Article19546 citations
    ABI

  4. The electrical properties of sulphur in silicon

    S. D. Brotherton, Micháel J. King, G.J. Parker

    Article19816 citations
    ABI

  5. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

    M. Stutzmann, W. B. Jackson, C. C. Tsai

    Article19855 citations
    ABI

  6. (110) surface atomic structures of covalent and ionic semiconductors

    D. J. Chadi

    Article19795 citations
    ABI

  7. Negative-U Properties for Point Defects in Silicon

    G. D. Watkins, John R. Troxell

    Article19805 citations
    ABI

  8. Theory of the silicon vacancy: An Anderson negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>U</mml:mi></mml:math>system

    G. A. Baraff, E. O. Kane, Michael Schlüter

    Article19805 citations
    ABI

  9. Transferable tight-binding models for silicon

    I. Kwon, R. Biswas, C. Z. Wang +2

    Article19944 citations
    ABI

  10. Generating Transferable Tight-Binding Parameters: Application to Silicon

    L. Goodwin, A Skinner, D. G. Pettifor

    Article19894 citations
    ABI

  11. Microscopic Theory of Atomic Diffusion Mechanisms in Silicon

    Roberto Car, Paul J. Kelly, Atsushi Oshiyama +1

    Article19843 citations
    ABI

  12. Barrier to Migration of the Silicon Self-Interstitial

    Yaneer Bar-Yam, John D. Joannopoulos

    Article19843 citations
    ABI

  13. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair

    G. D. Watkins

    Article19673 citations
    ABI

  14. High-resolution studies of sulfur- and selenium-related donor centers in silicon

    Erik Janzén, R. Stedman, G. Grossmann +1

    Article19843 citations
    ABI

  15. Computer Modelling of Electronic and Atomic Processes in Solids

    Book19972 citations
    ABI

  16. Ion-solid interactions for materials modification and processing

    D. B. Poker, D. Ila, Yaxiong Cheng +2

    Article19962 citations
    ABI

  17. Theory of Enhanced Migration of Interstitial Aluminum in Silicon

    G. A. Baraff, M. Schlüter, G. Allan

    Article19832 citations
    ABI

  18. DEFECT METASTABILITY IN HYDROGEN PASSIVATED POLYCRYSTALLINE SILICON

    N. H. Nickel, W. B. Jackson, N. M. Johnson

    Article19942 citations
    ABI

  19. DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL

    David Redfield

    Article19912 citations
    ABI

  20. Role of hydrogen complexes in the metastability of hydrogenated amorphous silicon

    W. B. Jackson

    Article19902 citations
    ABI

  21. Molecular-dynamics study of defect formation in<i>a</i>-Si:H

    Young K. Park, Charles W. Myles

    Article19952 citations
    ABI

  22. Ab initio pseudopotential calculations of point defects and boron impurity in silicon

    Jing Zhu, Lin Yang, C. Mailhiot +2

    Article19952 citations
    ABI

  23. <i>Ab initio</i>calculations on metastable defects in a-Si:H: The Staebler-Wronski effect

    R. Jones, G M S Lister

    Article19902 citations
    ABI