Article

Dependence of the divacancy concentration on the germanium content in p-Si1 − x Ge x (0 < x < 0.10) alloys irradiated with 5-MeV electrons

N. A. MatchanovPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 700084, Uzbekistan

Technical Physics Lettersjournal2007en

ABI

Abstract

The concentration of divacancies in Si1 − x Ge x solid solutions irradiated with 5-MeV electrons has been studied as a function of the germanium content in the 0 < x < 0.10 interval. It is demonstrated that the probability of the primary radiation-induced defect formation in the alloys bombarded with high-energy electrons weakly depends on the germanium content in the indicated interval.

Topics

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence

Identifiers

DOI: 10.1134/s106378500712005x

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Dependence of the divacancy concentration on the germanium content in p-Si1 − x Ge x (0 &lt; x &lt; 0.10) alloys irradiated with 5-MeV electrons

Abstract

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Citations and references

Dependence of the divacancy concentration on the germanium content in p-Si1 − x Ge x (0 < x < 0.10) alloys irradiated with 5-MeV electrons