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Works cited by this work

8 works

Work: Dependence of the divacancy concentration on the germanium content in p-Si1 − x Ge x (0 < x < 0.10) alloys irradiated with 5-MeV electrons

  1. Impurities and point defects in semiconductors

    V. V. Emtsev, T.V. Mashovets

    Article19817 citations
    ABI
  2. Production of Divacancies and Vacancies by Electron Irradiation of Silicon

    J. W. Corbett, G. D. Watkins

    Article19653 citations
    ABI
  3. Untitled

    Other1 citations
    ABI
  4. Untitled

    Other1 citations
    ABI
  5. Untitled

    Other1 citations
    ABI
  6. Untitled

    Other1 citations
    ABI