Article

Injection-voltaic effect based on multilayer semiconductor structures

Kh. K. AripovTashkent University of Information Technologies, Tashkent, UzbekistanN. B. AlimovaTashkent University of Information Technologies, Tashkent, UzbekistanKh. Kh. BustanovTashkent University of Information Technologies, Tashkent, UzbekistanE. V. Ob’edkovTashkent university of information technologiesSh. T. ToshmatovTashkent University of Information Technologies, Tashkent, Uzbekistan

Applied Solar Energyjournal2009en

ABI

Abstract

The analogy between the photovoltaic effect in solar cells and the injection-voltaic effect in the multilayer p-n semiconductor structures is described. The possibility to create a new elemental base of analog and digital electronic devices based on the injection-voltaic effect is demonstrated.

Topics

Semiconductor materials and interfaces Molecular Junctions and Nanostructures Semiconductor Quantum Structures and Devices

Identifiers

DOI: 10.3103/s0003701x09010034

Citations and references

Cited by 2 6 references

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