Some peculiarities of current-voltage characteristics of nCdS-pCdTe-heterostructures with intermediate layer of d ≅ 1 μ m
S. A. MuzafarovaШ. А. МирсагатовA. Yu. LeĭdermanB. U. AĭtbaevM. A. MakhmudovAS RU, Physical-Technical Institute, Tashkent (Uzbekistan)
ABI
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