Article

Influence of temperature on certain properties of n +-p and n +-p-p + structures based on secondary cast polycrystalline silicon

F. S. AbdurazzakovBabur Andizhan State University, Andizhan, UzbekistanС. З. ЗайнабидиновBabur Andizhan State University, Andizhan, UzbekistanB. M. AbdurakhmanovBabur Andizhan State University, Andizhan, UzbekistanL. O. OlimovBabur Andizhan State University, Andizhan, UzbekistanZ. N. Alad’inaA. L. KadyrovBabur Andizhan State University, Andizhan, Uzbekistan

Applied Solar Energyjournal2011en

ABI

Abstract

This paper discusses the I sc and U xx temperature dependencies of n +-p and n +-p-p + structures made of comparatively fine-grained secondary cast polycrystalline silicon upon their being homogenously heating and heated with a temperature gradient, as well as upon alteration of heat flux direction.

Topics

Silicon and Solar Cell Technologies Semiconductor Quantum Structures and Devices Solidification and crystal growth phenomena

Identifiers

DOI: 10.3103/s0003701x11020046

Citations and references

Cited by 03 references

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