Article

Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

Ш. А. МирсагатовFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Bodomzor-iuli 2b, Tashkent, 100084, UzbekistanI. B. SapaevFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Bodomzor-iuli 2b, Tashkent, 100084, UzbekistanZh. T. NazarovNavoi State Mining Institute, Yuzhnaya ul. 27a, Navoi, 210100, Uzbekistan

Inorganic Materialsjournal2014en

ABI

Abstract

We have studied the effect of ultrasonic processing on the electrical and photoelectric properties of a p-Si/n-CdS/n +-CdS injection photodiode. The results demonstrate that ultrasonic processing of such photodiodes reduces the density of surface states at the interface of their heterojunction as a result of defect annealing. This increases the spectral and integrated sensitivities of the photodiodes.

Topics

Thermography and Photoacoustic Techniques Advanced Semiconductor Detectors and Materials Chalcogenide Semiconductor Thin Films

Identifiers

DOI: 10.1134/s0020168515010148

Citations and references

Cited by 9 8 references

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