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Works cited by this work

8 works

Work: Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

  1. Physics of Semiconductor Devices

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  2. Physics of Semiconductor Devices

    Samarth Jain, S. Radhakrishna

    Article198715 citations
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  3. Heterojunctions and Metal Semiconductor Junctions

    Book197214 citations
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  4. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 citations
    ABI

  5. Effect of various treatments on Schottky diode properties

    I. Q. Pashaev

    Article20122 citations
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  6. Ultrasound-induced surface hardening of dislocation-free silicon

    Igor Ostrovskii, L. P. Steblenko, А. B. Nadtochii

    Article20002 citations
    ABI

  7. Acoustostimulated expansion of the short-wavelength sensitivity range of AlGaAs/GaAs Solar cells

    E. B. Zaveryukhina, N. N. Zaveryukhina, L. N. Lezilova +3

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20052 citations
    ABI

  8. Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells

    O. Ya. Olikh

    Article20112 citations
    ABI