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Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Китоб200258 иқтибос
    ABI

  2. Physics of Semiconductor Devices

    Samarth Jain, S. Radhakrishna

    Мақола198715 иқтибос
    ABI

  3. Heterojunctions and Metal Semiconductor Junctions

    Китоб197214 иқтибос
    ABI

  4. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 иқтибос
    ABI

  5. Effect of various treatments on Schottky diode properties

    I. Q. Pashaev

    Мақола20122 иқтибос
    ABI

  6. Ultrasound-induced surface hardening of dislocation-free silicon

    Igor Ostrovskii, L. P. Steblenko, А. B. Nadtochii

    Мақола20002 иқтибос
    ABI

  7. Acoustostimulated expansion of the short-wavelength sensitivity range of AlGaAs/GaAs Solar cells

    E. B. Zaveryukhina, N. N. Zaveryukhina, L. N. Lezilova +3

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20052 иқтибос
    ABI

  8. Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells

    O. Ya. Olikh

    Мақола20112 иқтибос
    ABI