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9 works

Work: Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

  1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 citations
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  2. Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor

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  3. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    ArticleAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20231 citations
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  4. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

    I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

    ArticleChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20231 citations
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  5. Influence of ultrasonic irradiation on the output parameters of photosensitive In–n +CdS–nCdS x Te1–x –pZnxCd1–x Te–Mo heterostructure

    Ш. А. Мирсагатов, O. K. Ataboev, M. A. Makhmudov +1

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20160 citations
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  6. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

    A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2

    ArticleIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering20210 citations
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  7. Social and pedagogical foundations of effective adaptation of students to an educational institution

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    ArticleEngineering and Agricultural InnovationsBIO Web of Conferences20230 citations
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  8. The effect of reagents on the production of highly nanocomposite bentonite sorbents using zol-gel technology

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  9. Photoelectric characteristics of Si-photocetitors

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    ArticleThermography and Photoacoustic TechniquesE3S Web of Conferences20230 citations
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