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Work: PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

  1. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

    Sharifa B. Utamuradova

    ArticleAdvanced Materials Characterization TechniquesAdvanced Physical Research20241 citations
    ABI

  2. Investigation of Sensitive Thermal Sensors Based on Si<Pt> and Si<Pd>

    Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

    ArticleGas Sensing Nanomaterials and SensorsEast European Journal of Physics20241 citations
    ABI

  3. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

    Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

    ArticleSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20260 citations
    ABI

  4. Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

    Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

    ArticleSilicon and Solar Cell TechnologiesJournal of Ovonic Research20260 citations
    ABI