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10 works

Work: New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

  1. Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

    M. G. Mil’vidskiĭ, V. V. Chaldyshev

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  2. Silicon-based photocells of enhanced spectral sensitivity with nano-sized graded band gap structures

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  3. Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

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  4. Quantometers of solar IR radiation based on silicon with multicharged nanoclusters of magnesium atoms

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    ArticleOptical and Acousto-Optic TechnologiesApplied Solar Energy20125 citations
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  5. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

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  6. Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
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