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Works cited by this work

8 works

Work: Obtaining new types of compounds between silicon and cadmium sulfide

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors201319 citations
    ABI

  2. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 citations
    ABI

  3. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleMaterial Science and ThermodynamicsSemiconductors200913 citations
    ABI

  4. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Article197812 citations
    ABI

  5. Injection-based photodetectors

    І. М. Викулин, Ш. Д. Курмашев, V. I. Stafeev

    Article200811 citations
    ABI

  6. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 citations
    ABI

  7. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    ArticlePhase-change materials and chalcogenidesApplied Solar Energy20198 citations
    ABI

  8. Improvement of life time of minority carriers in GaAs epi-layer grown on Ge substrate

    Ken Takahashi, Shigeki Yamada, Ryuichi Nakazono +4

    Article19982 citations
    ABI