Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics
M. K. BakhadyrhanovTashkent State Technical University, Tashkent, UzbekistanU. X. SodikovTashkent State Technical University, Tashkent, UzbekistanD. MelibayevTuerdi WumaierXinjiang Institute of Engineering, Urumchi, ChinaS. KoveshnikovTashkent State Technical University, Tashkent, UzbekistanK. A. KhodjanepesovJiangxiang ZhanXinjiang Institute of Engineering, Urumchi, China
ABI
Abstract
The paper presents unique functional capabilities of silicon with nanoclusters of impurity atoms with various characters. It is shown that, depending on the nature of the clusters, it is possible to expand the spectral diapason of sensitivity towards the IR region and obtain silicon with anomalously high negative magnetoresistance (/ > 100%) at room temperature. The formation of clusters of impurity atoms with different nature and concentration in the lattice of semiconductor materials is a new approach for obtaining bulk-nanostructured silicon with unique physical properties.
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