Works citing this work

2 works

Work: Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

   M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

   ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 citations

   ABIABI:AkademIndex/openalex/2021.article.000283

2. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

   I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

   ArticleSemiconductor materials and interfacesE3S Web of Conferences20211 citations

   ABIABI:AkademIndex/openalex/2026.other.571863