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6 works

Work: Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

  1. Prospects for the use of metal-oxide semiconductors in energy converters

    С. З. Зайнабидинов, С. И. Рембеза, Е. С. Рембеза +1

    ArticleZnO doping and propertiesApplied Solar Energy20196 citations
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  2. The The Gas-Sensitive Properties of Tin Dioxide Films

    Nuritdin Y. Yunusaliyev

    ArticleGas Sensing Nanomaterials and SensorsEast European Journal of Physics20243 citations
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  3. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    ArticleSemiconductor materials and interfacesApplied Solar Energy20192 citations
    ABI

  4. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    ArticleSemiconductor materials and interfacesApplied Solar Energy20182 citations
    ABI

  5. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

    С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

    ArticleSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 citations
    ABI

  6. Structural Features of Single-Crystal Silicon Doped with Copper

    S. Z. Zainabidinov, Sh. A. Makhmudov, A. K. Rafikov +3

    ArticleSilicon Nanostructures and PhotoluminescenceJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20250 citations
    ABI