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Works citing this work

7 works

Work: Semiconductors and Semimetals

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 citations
    ABI

  2. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 citations
    ABI

  3. Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

    S. A. Muzafarova, Ш. А. Мирсагатов, J. Janabergenov

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State200710 citations
    ABI

  4. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 citations
    ABI

  5. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20095 citations
    ABI

  6. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    ArticleAdvanced Semiconductor Detectors and MaterialsSemiconductors20093 citations
    ABI

  7. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    ArticleSemiconductor materials and interfacesUkrainian Journal of Physics20130 citations
    ABI