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Works cited by this work

15 works

Work: Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

  1. Constitution of Binary Alloys

    Max Hansen, K. Anderko, H. W. Salzberg

    Article195826 citations
    ABI

  2. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20109 citations
    ABI

  3. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    ArticleAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 citations
    ABI

  4. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 citations
    ABI

  5. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    ArticleSemiconductor materials and interfacesSemiconductors20098 citations
    ABI

  6. Untitled

    Other7 citations
    ABI

  7. Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n Photodiodes

    G. Bougnot, F. Delannoy, A. Foucaran +4

    Article19884 citations
    ABI

  8. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    ArticlePhotonic and Optical DevicesSemiconductors20124 citations
    ABI

  9. Surfactant-mediated growth of Si 1-x Sn x layers by molecular-beam epitaxy

    M. F. Fyhn, J. Lundsgaard Hansen, J. Chevallier +1

    Article19993 citations
    ABI

  10. Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1−x/Ge and SnxSi1−x/Si alloy systems

    Regina Ragan, Kyu Sung Min, Harry A. Atwater

    Article20013 citations
    ABI

  11. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20073 citations
    ABI

  12. IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers

    S. P. Kozyrev

    Article20093 citations
    ABI

  13. The Application of Scanning Tunneling Microscopy to In Situ Studies of Nickel Electrodes under Potential Control

    Ovadia Lev, Fu‐Ren F. Fan, Allen J. Bard

    Article19883 citations
    ABI

  14. Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

    R. Ginige, Brian Corbett, M. Modreanu +5

    Article20062 citations
    ABI

  15. Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)

    Kamesh Chilukuri, M. Mori, Carl L. Dohrman +1

    Article20062 citations
    ABI