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6 works

Work: IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

  1. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

    Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

    ArticleSilicon and Solar Cell TechnologiesAIP conference proceedings20234 citations
    ABI

  2. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

    Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 citations
    ABI

  3. Silicon with Binary GexSi1 – x Compounds

    Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 citations
    ABI

  4. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

    M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials20211 citations
    ABI

  5. Properties of “Higher Manganese Silicide-Silicon” Heterostructure

    Kobiljon K. ugli Kurbonaliev, Н. Ф. Зикриллаев, A. Zh. Khusanov

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20230 citations
    ABI

  6. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20250 citations
    ABI