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Works cited by this work

17 works

Work: Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

  1. Physics of Semiconductor Devices

    Simon M. Sze, Kwok K. Ng

    Book200633 citations
    ABI

  2. Effect of temperature on the thermodynamic density of states in a quantizing magnetic field

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    ArticleQuantum and electron transport phenomenaSemiconductors201416 citations
    ABI

  3. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Article199810 citations
    ABI

  4. Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

    Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3

    ArticleAdvanced Semiconductor Detectors and MaterialsApplied Physics20218 citations
    ABI

  5. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

    N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

    ArticleSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics20218 citations
    ABI

  6. Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

    G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1

    ArticleSilicon and Solar Cell TechnologiesAIP conference proceedings20235 citations
    ABI

  7. Theory of Tunneling

    E. O. Kane

    Article19614 citations
    ABI

  8. Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

    N. A. Turgunov

    ArticleSilicon and Solar Cell TechnologiesInorganic Materials20183 citations
    ABI

  9. The multivalued current–voltage characteristics in the tunnel diodes

    К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1

    Article20083 citations
    ABI

  10. Excess Tunnel Current in Silicon Esaki Junctions

    A. G. Chynoweth, W. L. Feldmann, R. A. Logan

    Article19613 citations
    ABI

  11. 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

    Tyler A. Growden, Weidong Zhang, E. R. Brown +5

    Article20183 citations
    ABI

  12. Tunnel junction <i>I</i>(<i>V</i>) characteristics: Review and a new model for p-n homojunctions

    Nelly Moulin, Mohamed Amara, Fabien Mandorlo +1

    Review article20193 citations
    ABI

  13. Changes in diodes with a p-n-transition under the influence of microwave radiation

    G. Gulyamov, Gulnoza Majidova, Feruza Muxitdinova +1

    ArticleSemiconductor Quantum Structures and DevicesAIP conference proceedings20233 citations
    ABI

  14. Negative Differential Resistance Devices and Circuits

    Paul R. Berger, A. Ramesh

    Chapter20112 citations
    ABI

  15. Simple Method for Calculating the Tunneling Current of an Esaki Diode

    J. Karlovský

    Article19622 citations
    ABI

  16. Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization

    Yury Turkulets, Ilan Shalish

    Article20182 citations
    ABI

  17. Untitled

    Other1 citations
    ABI