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Works citing this work

9 works

Work: Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

  1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

    Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

    ArticleSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 citations
    ABI

  2. Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

    Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 citations
    ABI

  3. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

    Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

    ArticleSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 citations
    ABI

  4. Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium

    Shakhrukh Kh. Daliev

    ArticleIon-surface interactions and analysisInternational Journal for Research in Applied Science and Engineering Technology20181 citations
    ABI

  5. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

    M. Kаrimov, A. K. Karakhodzhaev

    ArticleSemiconductor materials and interfacesRussian Physics Journal20010 citations
    ABI

  6. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

    M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

    ArticleSilicon and Solar Cell TechnologiesRussian Physics Journal20060 citations
    ABI

  7. Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30

    ArticleSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research20200 citations
    ABI

  8. EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

    Kh.S. Daliev, Anifa Paluanova

    ArticleAdvanced Materials and Semiconductor TechnologiesEurasianUnionofScientists20210 citations
    ABI

  9. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

    Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 citations
    ABI