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5 works

Work: Low threshold, large <i> T <sub>o</sub> </i> injectionlaser emissionfrom (InGa)As quantum dots

  1. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

    Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 citations
    ABI

  2. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  3. Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy

    D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov +2

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  4. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

    Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  5. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

    A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

    ArticleGaN-based semiconductor devices and materialsTechnical Physics Letters19990 citations
    ABI