Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation
Б. Е. УмирзаковInstitute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, UzbekistanМ. К. РузибаеваInstitute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, UzbekistanЗ. А. ИсахановInstitute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, UzbekistanR. M. ErkulovInstitute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, Uzbekistan
ABI
Abstract
The composition and parameters of energy bands in thin SiO2 films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO2 films grown on thick films, the value of Eg for thin SiO2 films is no higher than ~4.1 eV. This is explained by the presence of Si impurity atoms and nonstoichiometric oxides in the SiO2 film, which arise because of the impossibility of heating the system above 700 K.