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Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

M. G. DadamirzayevNamangan Engineering Pedagogical Institute, Namangan, 716003, Uzbekistan
Semiconductorsjournal2011en
ABI

Abstract

The emf U oc of hot charge carriers generated in an asymmetrical p-n junction in a microwave electromagnetic field is determined by hot holes despite the fact that the temperature of electrons is much higher than that of holes. It is established that the open-circuit voltage depends on the temperature of the carriers, which determine the total current through p-n junction.

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Cited by 20 references
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