Works citing this work

2 works

Work: Electrical Properties of Zinc and Cadmium Ion Implanted Layers in Gallium Arsenide

1. Ion doping of gallium arsenide

   П. В. Павлов, E. I. Zorin, D. I. Tetelbaum

   ArticlePhase-change materials and chalcogenidesRussian Physics Journal19800 citations

   ABIABI:AkademIndex/openalex/1980.article.000147

2. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1

   ArticleSemiconductor materials and interfacesRussian Physics Journal19810 citations

   ABIABI:AkademIndex/openalex/1981.article.000091