Yurii R. Nosov

Работ: 6

A. F. Ioffe Physicotechnical Institute, Leningrad, USSR

1. Transient Processes in Semiconductor Diodes and Fundamentals of Recombination Theory

   Yurii R. Nosov

   ГлаваSilicon and Solar Cell Technologies1969Цитирований: 0

   ABIABI:AkademIndex/openalex/1969.chapter.000001

2. Effect of an Electric Field in a Diode Base on Transient Processes

   Yurii R. Nosov

   ГлаваInduction Heating and Inverter Technology1969Цитирований: 0

   ABIABI:AkademIndex/openalex/1969.chapter.000002

3. Planar Diode with a Thin Base

   Yurii R. Nosov

   ГлаваSemiconductor Quantum Structures and Devices1969Цитирований: 0

   ABIABI:AkademIndex/openalex/1969.chapter.000003

4. Transient Processes in a Diode with a Small-Area Rectifying Contact

   Yurii R. Nosov

   ГлаваAdvanced Research in Systems and Signal Processing1969Цитирований: 0

   ABIABI:AkademIndex/openalex/1969.chapter.000004

5. Transient Processes in Diodes During the Passage of a Forward Current Pulse

   Yurii R. Nosov

   ГлаваInduction Heating and Inverter Technology1969Цитирований: 0

   ABIABI:AkademIndex/openalex/1969.chapter.000005

6. Basic Electronics of the Switching Processes in Semiconductor p-n Junctions

   Yurii R. Nosov

   ГлаваSemiconductor Quantum Structures and Devices1969Цитирований: 0

   ABIABI:AkademIndex/openalex/1969.chapter.000006