S. I. Vlaskina

Работ: 2

Starodubtsev Physico-Technical Institute, Uzbek Academy of Sciences, Tashkent

1. Investigation of crystal structure of cubic silicon carbide layers

   М. С. Саидов, Kh. A. Shamuratov, Marsel Kadyrov +1

   СтатьяSilicon Carbide Semiconductor Technologiesphysica status solidi (a)1986Цитирований: 0

   ABIABI:AkademIndex/openalex/1986.article.000039

2. Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

   S. I. Vlaskina, Alla Krasikova, В. Е. Родионов

   СтатьяSilicon Carbide Semiconductor Technologiesphysica status solidi (a)1991Цитирований: 0

   ABIABI:AkademIndex/openalex/1991.article.000047