В. Е. Родионов

Работ: 1

Institute of Semiconductors, Academy of Sciences of the USSR, Kiev

1. Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

   S. I. Vlaskina, Alla Krasikova, В. Е. Родионов

   СтатьяSilicon Carbide Semiconductor Technologiesphysica status solidi (a)1991Цитирований: 0

   ABIABI:AkademIndex/openalex/1991.article.000047