Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

Electrophysical properties are investigated of SiC films on silicon substrates produced at low temperatures using plasma activation of CVD-process. Hall effect measurements show that specially undoped films possess n-type conductivity. It is shown that the films irrespective of bias voltage relative to the substrate during precipitation are characterized by sufficiently high values of free carrier mobility. The electrophysical properties and X-ray studies of the films are explained by the formation of crystalline inclusions of SiC on the substrate surface. [Russian Text Ignored].

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