V. N. Ryazanov

Работ: 1

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk

1. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

   I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

   СтатьяSemiconductor materials and interfacesRussian Physics Journal1990Цитирований: 0

   ABIABI:AkademIndex/openalex/1990.article.000080