Статья

Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

I. A. BobrovnikovaKuznetsov Siberian Physicotechnical Institute at Tomsk State University, TomskM. D. VilisovaKuznetsov Siberian Physicotechnical Institute at Tomsk State University, TomskL. P. PorokhovnichenkoKuznetsov Siberian Physicotechnical Institute at Tomsk State University, TomskM. P. RuzaikinKuznetsov Siberian Physicotechnical Institute at Tomsk State University, TomskV. N. RyazanovKuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk

Russian Physics Journaljournal1990en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor materials and interfaces Surface and Thin Film Phenomena Semiconductor Quantum Structures and Devices

Идентификаторы

DOI: 10.1007/bf01325005

Цитирования и источники

Цитирований: 0Использованных источников: 3

Показатели — AkademScholar · Скоро