L. P. Porokhovnichenko

Работ: 2

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk

1. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

   I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

   СтатьяSemiconductor materials and interfacesRussian Physics Journal1990Цитирований: 0

   ABIABI:AkademIndex/openalex/1990.article.000080

2. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

   И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

   СтатьяSemiconductor materials and interfacesRussian Physics Journal1992Цитирований: 0

   ABIABI:AkademIndex/openalex/1992.article.000151